Method of forming transparent conductive film and apparatus for forming the same
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United States of America Patent
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Dec 4, 1990
Grant Date -
N/A
app pub date -
Apr 17, 1989
filing date -
Apr 20, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a transparent conductive thin film by sputtering includes the step of placing a target consisting of a conductive oxide material and a substrate on which the thin film is to be formed in a pressure vessel, the step of supplying argon gas and oxygen gas after the pressure vessel is substantially evacuated, the step of supplying a sputtering current to the target to maintain a discharge state, the step of detecting the partial pressure of oxygen in the gas mixture in the pressure chamber, and the step of controlling the flow rate of oxygen gas. The flow rate of the oxygen gas is controlled by a control unit such that the value of the partial pressure of oxygen which is detected in the partial pressure detection step is always kept constant.
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