Field-effect semiconductor device comprising an ancillary electrode
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United States of America Patent
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Dec 11, 1990
Grant Date -
N/A
app pub date -
Jul 28, 1988
filing date -
Jul 31, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A field-effect transistor comprises an ancillary electrode in addition to the source, gate and drain electrodes. In this device, a semiconducting body bears source, gate and drain metallizations which define a main transistor. The metallization of the drain is separated into two parts which are separated by a channel on which is placed a second gate metallization defining a secondary transistor. The two parts of the drain are coupled by this secondary transistor, the channel of which is separated from the main channel. The secondary transistor can be used to control the gain of the main transistor or to modulate its amplitude signal or to mix two frequencies addressed on the two gates.
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