Turn-off semiconductor component and use thereof
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United States of America Patent
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Dec 11, 1990
Issued Date -
N/A
app pub date -
Mar 23, 1989
filing date -
Mar 20, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device which can be turned off via a first gate arranged at the cathode side including, a second gate structure comparable to the structure of the first gate arranged at the anode side. During the turning off, the charge carriers can be more rapidly drawn away from the base area of the component via the second anode-side gate and the turn-off behavior can thus be improved. In a dual gate device of the invention, a dual cascode circuit constructed with two MOSFETs.
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