Photoelectric conversion device
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United States of America Patent
Stats
-
Dec 18, 1990
Issued Date -
N/A
app pub date -
Mar 28, 1989
filing date -
Jun 17, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An image sensor including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.
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