Anodizable strain layer for SOI semiconductor structures
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 1, 1991
Issued Date -
N/A
app pub date -
Mar 10, 1989
filing date -
Dec 21, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
A silicon on insulator semiconductor structure employs a strain layer fabricated of an electrically inactive material. The strain layer comprises silicon with a germanium additive to produce a sublayer exhibiting a low breakdown voltage and thus effective for selective anodization.
Loading the Abstract Image...
OK
First Claim
Family
Loading Family data...
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully