Semiconductor device using copper metallization
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United States of America Patent
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Jan 15, 1991
Grant Date -
N/A
app pub date -
Sep 17, 1987
filing date -
Sep 17, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device comprises a silicon substrate, an insulating film in which a contact hole is formed, a metallic layer deposited on said silicon substrate through the contact hole, for forming an ohmic contact to the silicon substrate, a barrier layer deposited on the metallic layer, for preventing reaction and interdiffusion between copper and silicon, and a metallization film including at least copper deposited on the barrier layer.
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