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Abstract

A ceramic composition for a reduction-reoxidation type semiconductive capacitor, comprising (A) barium titanate or barium titanate and strontium titanate, (B) titanium oxide, and (C) at least one oxide selected from the group consisting of the oxides severally of La, Ce, Nb, Nd, Dy, Y, Sb, W, and Ta in a molar ratio of 100:0.01.about.15:0.01.about.10 and further comprising (D) 0.001 to 1% by weight, based on the total amount of the compounds, (A), (B), and (C), of at least one oxide selected from the group consisting of the oxides severally of Cu, Zn, Al, Mg, and Mo and exhibiting a breakdown voltage of not less than 900 V, and insulation resistance of not less than 10.sup.10 .OMEGA., an electrostatic capacity per unit surface area of not less than 0.06 .mu.F/cm.sup.2, and a low dielectric loss, tan .delta., of not more than 2.0%.

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First Claim