Variable capacitance diode element having wide capacitance variation range
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United States of America Patent
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Jan 22, 1991
Grant Date -
N/A
app pub date -
Jan 17, 1990
filing date -
Jan 19, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A variable-capacitance diode element having a wide capacitance variation range is disclosed which comprises an epitaxial layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type; a diffusion layer of the first conductivity type which is formed in the epitaxial layer with a higher concentration than said epitaxial layer by means of ion implantation; at least one diffusion layer of a second conductivity type which is formed in the diffusion layer of the first conductivity type so as to define PN junction; and a first-conductivity type buried layer of a low resistivity which is formed the boundary portion between the semiconductor substrate and the epitaxial layer where a depletion layer reaches which occurs in response to a reverse bias voltage being applied to the PN junction, whereby the depletion layer is caused to extend to a maximum possible effect.
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