Method for deposition of silicon oxide on a wafer
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United States of America Patent
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Jan 29, 1991
Grant Date -
N/A
app pub date -
May 27, 1988
filing date -
May 27, 1988
priority date (Note) -
Expired
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Abstract
A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
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