Light emitting semiconductor having a rear reflecting surface
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 5, 1991
Issued Date -
N/A
app pub date -
Mar 23, 1990
filing date -
Jan 16, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate between an underlying substrate and the overlaying light emitting semiconducting components. The light reflecting surface provides enhanced photon reflectance for the light emitting device. The active region of the light emitting device is formed using epitaxial growth techniques.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully