Semiconductor integrated circuit device

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United States of America Patent

PATENT NO 4990992
SERIAL NO

07253673

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Abstract

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A memory array is divided into a plurality of circuit blocks which each include wirings composed of electrically conductive polycrystalline silicon layers and circuit elements that will be operated by signals supplied via the wirings. Each circuit block is served with a signal via an aluminum layer. The signal supplied to the circuit block is transmitted to the circuit elements via an internal wiring. If the aluminum layer is broken the circuit block formed on the remote side beyond the broken portion fail to work properly. Therefore, breakage of the aluminum layer can be easily detected. Further, since signals are supplied to the circuit blocks via an aluminum layer, the memory array operates at increased speeds.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTDTOKYO 100-8280

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Uchida, Makio Fuchu, JP 12 95

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