Importance

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Abstract

A chemical vapor deposition (CVD) reactor and method are disclosed wherein a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate. The injection angle of reactant gas being introduced into the chamber is adjusted by baffles for statically deflecting gas flow entering the chamber. Adjustment of the gas inlet orifices and/or exhaust ports and adjustment of the injection angle for the reactant gas is selected for achieving enhanced coating uniformity, and conformality of deposition if necessary or desired, on the substrate.

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First Claim