MIS transistor structure for increasing conductance between source and drain regions
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United States of America Patent
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-
Feb 26, 1991
Grant Date -
N/A
app pub date -
Jun 30, 1989
filing date -
Jul 1, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A metal-insulator-semiconductor transistor comprises an insulator layer, a semiconductor body provided on the insulator layer and comprising a source region, a drain region and a channel region extending in a first direction between and interconnecting the source region and the drain region, a gate insulator film provided on the semiconductor body so as to cover the channel region except for the part of the channel region in contact with the insulator layer, and a gate electrode of a conductive material provided in contact with the gate insulator film so as to cover the channel region underneath the gate insulator film except for the part of the channel region in contact with the insulator layer. The channel region has a width substantially smaller than twice the maximum extension of the depletion region formed in the channel region.
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