Aluminum contact etch mask and etchstop for tungsten etchback

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United States of America Patent

PATENT NO 4997789
SERIAL NO

07265162

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Abstract

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A method for forming CVD tungsten contacts in a planarized semiconductor body. The method utilizes aluminum as an etch mask and etch stop to prevent etching of underlying layers during contact formation.

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Patent Owner(s)

Patent OwnerAddress
TEXAS INSTRUMENTS INCORPORATED A CORP OF DE13500 NORTH CENTRAL EXPRESSWAY DALLAS TX 75265

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adams, Martha S Rosenberg, TX 2 65
Harper, Ralph G Guy, TX 2 65
Keller, Stephen A Sugar Land, TX 15 390
Spry, Piper A Sugar Land, TX 2 65

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