Method of priming semiconductor substrate for subsequent photoresist masking and etching
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United States of America Patent
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Mar 19, 1991
Issued Date -
N/A
app pub date -
Jul 12, 1988
filing date -
Jul 12, 1988
priority date (Note) -
Expired
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Abstract
Disclosed is a method of improving semiconductor device yield by enhancing photoresist adherence to semiconductor substrates during device fabrication. The surface of a layer, such as silicon oxide of silicon nitride, on a semiconductor substrate is coated with a thin layer of oxygen-reactive metal prior to applying photoresist material thereto. The metal is selected from the group consisting of tungsten, titanium, chromium, and combinations thereof; the thickness of the layer of oxygen-reactive metal is of the order of 50-100 .ANG.. The metal coating facilitates the adhesion of the resist material and reduces undercutting of the layer to be etched.
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