Impurity band conduction detector having photoluminescent layer
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United States of America Patent
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Mar 19, 1991
Grant Date -
N/A
app pub date -
Sep 6, 1989
filing date -
Sep 6, 1989
priority date (Note) -
Expired
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Abstract
An impurity band conduction (IBC) infrared detector is provided with a photoluminescent (PL) layer proximate the blocking layer of the device. The PL layer comprises a narrow band-gap semiconductor material selected for generating long wavelength infrared (LWIR) photoluminescent photons in response to incident photons of selected spectra. The PL layer improves the quantum efficiency of IBC devices in detecting incident photons in the short wavelength infrared (SWIR), ultraviolet (UV), and X-ray spectra. The thickness of the PL layer can be varied to optimize the photoluminescent response to incident photons of a selected spectrum. In a back-illuminated detector array, absorption of a SWIR photon in the PL layer results in one or more LWIR photons emitted in a time that is sufficiently shorter than the multiplexer frame time. The PL layer should be several times thicker than the absorption length of the SWIR photon, and the luminescent photons should not be reabsorbed by the PL layer or strongly reflected by the interface with the blocking layer.
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