Importance

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Abstract

A method of forming a metallization pattern on a substrate used in the fabrication of a solar cell or other semiconductor device. The metallization pattern is formed by (1) hydrogen passivating a silicon substrate having a P/N junction formed therein adjacent one surface of the substrate, with a damaged surface layer being formed in conjunction with the hydrogen passivation process, and (2) laser annealing selected portions of said damaged layer whereby said selected portions form a metallization pattern to which selected metals will securely adhere when applied by immersion plating. The foregoing fabrication steps may be performed simultaneously. A layer of material comprising SiO.sub.x may be redeposited on the one surface of the substrate as part of the hydrogen passivation procedure. In the laser annealing step, sections of the redeposited material scanned by the laser beam are ablated and the exposed underlying damaged surface layer is annealed.

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First Claim