Semiconductor devices having strain-induced lateral confinement of charge carriers
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United States of America Patent
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Apr 30, 1991
Grant Date -
N/A
app pub date -
Mar 16, 1989
filing date -
Mar 16, 1989
priority date (Note) -
Expired
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Abstract
A semi-conductor device having the properties of carrier confinement induced by local variations of strain comprising a semi-conductor base material, a vertical confinement layer over the semi-conductor base material for vertical confining charge carriers and a strain layer which creates a local strain pattern in the underlying semi-conductor material which strain pattern laterally confines charge carriers in accordance with the strain pattern. The semi-conductor base may include a quantum-well, e.g., one formed utilizing a superlattice structure, where the charge carriers are laterally confined within the quantum well by the strain pattern.
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