Laser diode pumped, erbium-doped, solid state laser with high slope efficiency
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United States of America Patent
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May 7, 1991
Grant Date -
N/A
app pub date -
Oct 31, 1989
filing date -
Oct 31, 1989
priority date (Note) -
Expired
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Abstract
A laser and method for producing a laser emission at a wavelength of substantially 2.8 microns is disclosed. In a preferred embodiment of the invention, the laser comprises laser diode means for emitting a pump beam at a preselected wavelength; a crystal; and a laser cavity defined by first and second reflective elements at opposing ends of the crystal to form a reflective path therebetween; the crystal having a preselected host material doped with a predetermined percent concentration of erbium activator ions sufficient to produce a laser emission at substantially 2.8 microns when the crystal is pumped by the laser diode means, a portion of the laser emission at substantially 2.8 microns being outputted from one of the first and second reflective elements at a slope efficiency of at least 5 percent, but preferably 10 percent, when the crystal is pumped by the pump beam.
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