Method for producing semiconductive single crystal

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United States of America Patent

PATENT NO 5015327
SERIAL NO

07323029

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Abstract

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A ZnSe thin film with good quality is homoepitaxially grown on a ZnSe single crystal substrate which is produced by the Recrystallization Traveling Heater Method.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDOSAKA JAPAN OSAKA
PRODUCTION ENGINEERING ASSOCIATIONOSAKA-SHI OSAKA-FU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nanba, Hirokuni Osaka, JP 9 94
Taguchi, Tsunemasa Suita, JP 4 36

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