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Abstract

A modular continuous vapor deposition system for the fabrication of semiconductor devices having a plurality of deposition modules isolated from each other by isolation modules which prevent the cross contamination of the different processing gases used in the deposition modules. Each of the deposition modules has a flow of a decomposable processing gas therethrough at a desired pressure, and means for generating a continuous glow discharge. The glow discharge decomposes the processing gas to deposit a layer of amorphous semiconductor material on the discrete substrate sheets as they are transported through each of the deposition modules. A plurality of gate valves effectively seal the interfaces between adjacent modules to isolate them from their immediate neighbors and are opened in a predetermined sequence to allow the substrate sheets to be transported from one module to the next. The isolation modules are connected to a vacuum source and a back-fill gas source. A control coordinates the activation of the gate valves, the vacuum source and the back-fill gas source so that the substrate sheets can be uninterruptedly transported through the system while maintaining the glow discharge continuous and gas pressure in each deposition module at the desired pressure.

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First Claim