Method of annealing fully-fabricated, radiation damaged semiconductor devices
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United States of America Patent
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May 21, 1991
Grant Date -
N/A
app pub date -
Jun 29, 1989
filing date -
Jun 29, 1989
priority date (Note) -
Expired
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Abstract
A method and apparatus for annealing devices having radiation induced damage is disclosed. A device is exposed to electron irradiation to induce damage to the active area. The device is then annealed with a rapid thermal anneal at a low temperature. The rapid thermal anneal may, optionally, be followed by a conventional oven or furnace anneal at a temperature of about 300.degree. to 450.degree. C. The method produces devices having improved and well controlled characteristics such as short circuit operating area, power dissipated during switching, and on-state voltage drop.
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