Variable-capacitance diode element having wide capacitance variation range
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United States of America Patent
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May 21, 1991
Grant Date -
N/A
app pub date -
Jan 17, 1990
filing date -
Jan 19, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A variable-capacitance diode element is disclosed which comprises a semiconductor substrate of a first conductivity type having an epitaxial layer of the first conductvity type provided on a main surface portion thereof, said epitaxial layer having a higher resistivity than that of said semiconductor substrate; a first diffusion layer of the first conductivity type diffused in said epitaxial layer and having a lower resistivity than that of said epitaxial layer; a second diffusion layer of a second conductivity type surrounded by said first diffusion layer and having a lower resistivity than that of said first diffusion layer; and a third diffusion layer of the second conductivity type of a small diffusion length covering an exposed portion of a major surface of said first diffusion layer and an exposed portion of a major surface of said diffusion layer. With such construction, the capacitance variation range of the diode element is widened, and the high-frequency serial resistance R.sub.S is reduced, so that the quality factor Q is enhanced.
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