X-ray masks, their fabrication and use
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United States of America Patent
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May 28, 1991
Issued Date -
N/A
app pub date -
May 19, 1989
filing date -
Apr 21, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An X-ray mask for manufacturing chips is produced by forming an X-ray transparent semiconductor membrane with gaps and including X-ray transparent material in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.
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