Importance

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Abstract

Structures and methods of fabrication thereof wherein the method selectively supplies electrons to a first electroactive material in the presence of a second electroactive material wherein the first and second electroactive materials have different redox potentials. The electrons are selectively supplied either by electrochemical means or by appropriately chosen reducing agents. A structure fabricated by these methods has a first electroactive body disposed on a second electroactive body wherein the first body has a pattern therein exposing at the base thereof the surface of the second electroactive material body. Electrons can be selectively supplied to the surface of the second electroactive material body which is exposed at the base of the pattern in the first electroactive material body. Upon exposing the structure to a seeding solution seed is selectively supplied to those regions to which electrons have been selectively supplied. Electrically conductive material can then be electrolessly deposited onto the seed material to form an electrically conductive pattern in the pattern in the first electroactive body. The electroactive material bodies are preferably polyimide materials. The structures can be used as the top metallization levels of an electronic device such as a semiconductor chip or a semiconductor chip packaging substrate.

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First Claim