Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist
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United States of America Patent
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Jun 4, 1991
Issued Date -
N/A
app pub date -
Jul 7, 1989
filing date -
Oct 2, 1986
priority date (Note) -
Expired
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Abstract
This invention is that of high temperature polyamides containing the hexafluoroisopropylidene group. The high temperature polyamides of the invention and photo or radiation sensitizers provide improved high temperature positive resists which can be developed in aqueous alkaline developer and thermally anneal to form heat resistant, polyoxazole relief structures suitable for use in microelectronic and printing applications. The positive photoresists of the invention have improved solubility in coating solvents and improved photospeed. The polyamides of the invention can be prepared by conventional condensation reactions; e.g. the condensation of a diamine and diacid chloride. In addition the polyamides of this invention provide high temperature protective coatings with superior adhesion properties in applications other than the photoresist area.
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