Method of manufacturing crystal resonators having low acceleration sensitivity
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United States of America Patent
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Jun 11, 1991
Issued Date -
N/A
app pub date -
Dec 26, 1989
filing date -
Oct 2, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a process of producing crystal resonators in which the direction and magnitude of the gamma vector is substantially the same for each resonator, a method of altering the resonator during the process to change the resonator mass, shape, or electrode placement so as to reduce the gamma vector magnitude of each crystal. This alteration may be done by adding mass, removing mass, or both adding and removing mass, or by positioning the electrodes to selectively position the electric field in the crystal, all in order to move the location of the active region of vibration and thereby reduce the gamma vector.
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