Diamond growth
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United States of America Patent
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-
Jun 11, 1991
Grant Date -
N/A
app pub date -
Apr 26, 1989
filing date -
Apr 28, 1988
priority date (Note) -
Expired
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Abstract
Crystalline diamond is grown on a substrate by placing the substrate on a nitride surface which completely covers a graphite support, creating an atmosphere of a gaseous carbon compound around the substrate, bringing the temperature of the nitride surface and the substrate to at least 600.degree. C., and subjecting the gaseous carbon compound to microwave energy suitable to cause the compound to decompose and produce carbon which deposits on the substrate and forms crystalline diamond thereon.
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