Selective deposition of tungsten on TiSi.sub.2
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United States of America Patent
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Jun 11, 1991
Grant Date -
N/A
app pub date -
Aug 30, 1990
filing date -
Aug 30, 1990
priority date (Note) -
Expired
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Abstract
An improved process for preparing selective deposition of conductive metals on disilicide encroachment barriers allows the construction of integrated circuit components wherein the metal/disilicide interface is substantially free of O and/or F contamination. The level of interfacial oxygen and/or fluorine contamination in the selective W deposition on the TiSi.sub.2 was substantially reduced or eliminated by first forming a C49 TiSi.sub.2 phase on a substrate, selectively depositing W on the C49 TiSi.sub.2 phase and thereafter annealing at a (minimum) temperature sufficient to convert the high resistivity phase C49 TiSi.sub.2 to the low resistivity phase C54 TiSi.sub.2.
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