Pressure sensor comprising a silicon body
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United States of America Patent
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-
Jun 18, 1991
Issued Date -
N/A
app pub date -
Sep 20, 1989
filing date -
Jan 28, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A pressure sensor comprising a silicon body (1) which is arranged on a substrate (2). The silicon body (1) comprises a cavity (4) in the form of a blind hole, or enclosed chamber which thus forms a diaphragm (5). On the outer surface thereof there is arranged a Wheatstone bridge consisting of piezoresistive resistance elements (6, 7, 8, 9). The voltage/pressure characteristic of this pressure sensor exhibits a non-linearity of more than 1% in the case of pressure loads in excess of 250 bar. This non-linearity must be reduced. Therefore, a further cavity (10) is provided in the silicon body (1) on both sides of the resistance elements (8, 9) arranged at the edge of the diaphragm (5).
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