Chemical vapor deposition process for depositing large-grain polysilicon films
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United States of America Patent
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Jun 25, 1991
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N/A
app pub date -
Jan 25, 1989
filing date -
Mar 19, 1986
priority date (Note) -
Expired
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Abstract
A deposition process includes the steps of heating a substrate, and passing silane gas over the substrate such that the heated substrate causes decomposition of the silane gas thereby to cause deposition of polysilicon film on the substrate. The temperature of the substrate and the pressure of the silane gas are controlled so as to increase the grain size of the deposited films.
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