Group I-III-VI.sub.2 semiconductor films for solar cell application
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United States of America Patent
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Jul 2, 1991
Grant Date -
N/A
app pub date -
Jun 7, 1989
filing date -
Jun 7, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.
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