Process for CVD deposition of tungsten layer on semiconductor wafer
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United States of America Patent
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Jul 2, 1991
Grant Date -
N/A
app pub date -
Aug 25, 1989
filing date -
Aug 25, 1989
priority date (Note) -
Expired
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Abstract
An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer of tungsten; maintaining the vacuum chamber at a pressure of from about 20 to 760 Torr to improve the deposition rate of the tungsten, as well as to improve the reflectivity of the tungsten surface; and, when needed, the additional step of forming a nucleation layer on the semiconductor layer prior to the step of depositing tungsten on the semiconductor wafer to improve the uniformity of the deposited tungsten layer.
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