Method of oxide etching with condensed plasma reaction product

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United States of America Patent

PATENT NO 5030319
SERIAL NO

07457946

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Abstract

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Oxide material, on a substrate, in a reactor, is etched by dissolving a hydrogen halide reaction product in a liquid phase reaction product. Both the hydrogen halide and liquid phase reaction products are produced through a chemical reaction of a reactive gas containing hydrogen and halogen elements as well as at least one gaseous compound which has been remotely activated. The liquid phase reaction product is obtained by condensation on the oxide material. The use of charged particle beams and irradiating light is discussed.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKAWASAKI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayasaka, Nobuo Yokohama, JP 81 3373
Nishino, Hirotaka Yokohama, JP 24 751
Okano, Haruo Tokyo, JP 90 4214

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