Method of fabricating a CMOS semiconductor device
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United States of America Patent
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-
Jul 9, 1991
Grant Date -
N/A
app pub date -
Oct 6, 1989
filing date -
Oct 14, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode.
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