MOSFET transistor
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United States of America Patent
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-
Jul 9, 1991
Grant Date -
N/A
app pub date -
Mar 12, 1990
filing date -
Mar 10, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOSFET transistor, in which source and drain regions are formed at a certain distance away from each other in a surface area of a semiconductor substrate having a first conductivity type, and a gate electrode is formed on the surface of the substrate through a gate insulating film formed thereon between the source and drain regions, and in which a channel region located in the surface area of the substrate between the source and drain regions is composed of different concentration regions, and a threshold voltage of a high concentration channel region is lower than that of a low concentration channel region.
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