Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti-reflective coating during laser planarization
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United States of America Patent
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Jul 16, 1991
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N/A
app pub date -
Sep 5, 1990
filing date -
Sep 5, 1990
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Expired
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Abstract
A method for improving step coverage of metallization layers of an aluminum alloy on an integrated circuit involves use of a deposited layer of a high melting point metal, such as tungsten or an alloy of tungsten and titanium, as an anti-reflective coating (ARC) to increase the efficient use of laser energy for planarization purposes where the underlying aluminum alloy covers a step, such as at an open via.
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