Simplified current sensing structure for MOS power devices
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United States of America Patent
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Jul 23, 1991
Grant Date -
N/A
app pub date -
Jun 7, 1989
filing date -
Jun 7, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a DMOS power device, a current sensing apparatus comprises bonding pads arranged in specific locations with at least one current sense pad having active cells thereon and a source pad which is separated from the current sense pad. The configuration of cells provides that sources are tied together by a metal layer, which, due to its specific resistance, forms a resistance path between the source pad and the current sense pad or more specifically between the points of contact of a Kelvin lead of the source pad and the current sense pad. The invention has the advantages that substantially the entire chip area is utilized for conduction of power currents and that internal components form a resistive path for current to voltage conversion.
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