Non-volatile semiconductor memory
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United States of America Patent
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Jul 23, 1991
Grant Date -
N/A
app pub date -
Aug 10, 1989
filing date -
Aug 12, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a non-volatile semiconductor memory of this invention, a memory cell array constituted by a plurality of memory cells is divided into a plurlaity of blocks, and erase lines which are common to the respective blocks and independent from each other are arranged. In the data write mode, a predetermined voltage is applied to only the erase line connected to a selected one of the blocks.
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