Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers
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United States of America Patent
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Jul 30, 1991
Grant Date -
N/A
app pub date -
Sep 24, 1990
filing date -
Sep 24, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and apparatus for detecting a planar endpoint on a semiconductor wafer during chemical/mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance, an oxide coating of the wafer is removed and a harder material is contracted by the polishing surface. In a preferred form of the invention, the change in friction is detected by rotating the wafer and polishing surface with electric motors and measuring current changes on one or both of the motors. This current change can then be used to produce a signal to operate control means for adjusting or stopping the process.
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