Method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the corresponding device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 13, 1991
Grant Date -
N/A
app pub date -
Jan 17, 1990
filing date -
Jan 20, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced. On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diffusion through a flat surface, a semiconductor device is obtained which is capable of a multi-wavelength laser effect, of which the different junctions are situated in a plane parallel with the base of the substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully