Semiconductor device

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United States of America Patent

PATENT NO 5041897
SERIAL NO

07599333

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Abstract

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A semiconductor device has a fuse element formed on an insulating substrate, and a first insulating layer formed on the substrate and covering the fuse element. Further insulation on the first insulating layer nitride has an opening exposing the region of the first insulating layer above said fuse.

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Patent Owner(s)

Patent OwnerAddress
SEIKOSHA CO LTD A CORP OF JAPAN6-21 KYOBASHI 2-CHOME CHUO-KU TOKYO
NIPPON PRECISION CIRCUITS LTD A CORP OF JAPAN5-8 GINZA 3-CHOME CHUO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Machida, Koji Tokyo, JP 8 55
Nakamura, Hideyuki Tokyo, JP 128 831
Tonegi, Hiroshi Tochigi, JP 1 12

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