Importance

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Abstract

A method of hermetically sealing an electrical feedthrough (5) in a semiconductor-on-insulator device comprising the steps of producing an electrically insulating layer (2) on a semiconductive material (1) having a first surface area, producing one or more electrodes (4) on a non-conductive substrate (3) of a second surface area which may be greater than the first surface area, with each electrode having an electrical feedthrough (5) associated therewith, placing the semiconductive layer on the substrate with the insulating layer in contact with the substrate and such that each electrical feedthrough extends beyond the edge of the semiconductive layer, and bonding the semiconductive layer to the substrate to provide an hermetic seal around the feedthrough and thus protect the integrity of the electrode associated therewith and disposed between the semiconductive layer and the substrate.

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First Claim