Method of manufacturing a broadband high emission power semiconductor laser from a BRS type buried stripe structure, and resulting laser
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United States of America Patent
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Aug 27, 1991
Grant Date -
N/A
app pub date -
Sep 7, 1989
filing date -
Sep 8, 1988
priority date (Note) -
Expired
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Abstract
The present invention concerns a method for manufacturing a buried stripe semiconductor laser comprising the steps of depositing by epitaxy at least the heterostructure (51, 52, 53, 54) comprising at least one active material layer (53) on a substrate (50) and then depositing a dielectric mask (55) over the structure thus obtained and etching the latter through the mask (55) to obtain stripes in the active material layer (53) and any layer or layers (54) previously deposited by epitaxy over the active material layer (53), then carrying out impurity ionic implantation in the structure, protecting the active material stripes (53) and any layer or layers (54) that may have been deposited over this material by means of a mask (55) that is not transparent to ionic implantation.
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