Dielectric layer of first interconnection for electronic semiconductor devices
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United States of America Patent
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Sep 3, 1991
Issued Date -
N/A
app pub date -
Jul 26, 1989
filing date -
Sep 29, 1988
priority date (Note) -
Expired
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Abstract
A dielectric layer of first interconnection for electronic semiconductor devices, specifically CMOS circuits, comprises a first thickness of tetraethylorthosilicate which is overlaid by a layer of self-planarizing siloxane. That layer provides a surface structure which is permissive of the subsequent conventional masking and electric contact attaching steps.
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