Internal low voltage transformation circuit of static random access memory
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United States of America Patent
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-
Sep 3, 1991
Grant Date -
N/A
app pub date -
May 31, 1989
filing date -
Jun 1, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a static RAM having an internal low voltage transformation circuit, a word line drive circuit is provided which applies a low voltage, from an internal low voltage transformation circuit to a word line during read-out to improve the static RAM operating margin. The internal low voltage transformation circuit is formed by a reference voltage supply circuit and an internal voltage control circuit. A data hold voltage is supplied, when the static RAM is operating at a lower voltage, by a power pull-down device having a lower power consumption than the internal low voltage transformation circuit so as to achieve power consumption savings.
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