Amplifier having a low noise active GaAs MESFET load
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United States of America Patent
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-
Sep 10, 1991
Grant Date -
N/A
app pub date -
Jul 18, 1990
filing date -
Jul 18, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A high gain, low noise amplifier having an active load with an inductor. The circuit may be fabricated, into a microwave monolithic integrated circuit using GaAs field effect transistors. The amplifier input is connected to the gate terminal of a first MESFET. A DC voltage source is connected to the drain terminal of the first MESFET via a low noise active load device having a second MESFET. The load device also includes an inductor connected between the drain terminal of the first MESFET and the source terminal of the second MESFET. The output terminal of the amplifier is connected to the drain terminal of the first MESFET.
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