Measuring integrity of semiconductor multi-layer metal structures
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United States of America Patent
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Sep 17, 1991
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N/A
app pub date -
Jul 2, 1990
filing date -
Jul 2, 1990
priority date (Note) -
Expired
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Abstract
A fast, nondestructive, and low cost method for measuring the integrity of semiconductor multi-layer conducting structures uses a voltage spectral density technique. The method compares the magnitude and frequency of generally non-periodic low frequency voltages induced by direct current flow in test structures to the same parameters of a defect free structure.
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