Monolithic temperature sensing device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 17, 1991
Grant Date -
N/A
app pub date -
Jan 10, 1989
filing date -
Jan 10, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor diode monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode provides a voltage that varies linearly as a function of temperature for the power transistor. The diode is constructed in such a manner so as to prevent latch-up (i.e. where a parasite silicon controlled rectifiers is turned on, locking the power transistor in an on condition) and voltage breakdown (i.e. where the diode malfunctions from excessive voltage).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully