Multi-layered interconnection structure for a semiconductor device
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United States of America Patent
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Sep 17, 1991
Grant Date -
N/A
app pub date -
Mar 12, 1990
filing date -
Mar 14, 1989
priority date (Note) -
Expired
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Abstract
An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride layer, and a second refractory metal nitride layer. Titanium or tungsten is used as a refractory metal. The second refractory metal nitride is formed by thermally nitriding the refractory metal layer. The second refractory metal nitride layer formed by the thermal process has a close packed crystal structure and has an excellent barrier characteristic.
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